Tool/software: WEBENCH® Design Tools
Dear Colleagues. I ask you to resolve my doubts. Unfortunately, I could not get the PSpice of the TI GaN FET model. According to my experiments with real circuis and simulation, it can be assumed that the switching speed of a cascode GaN transistor like for example TPH3212PS can be increased several times if the low-voltage n-channel MOSFET in its circuit is replaced by a p-channel MOSFET connected by the source to the source of GaN. A similar scheme is presented in RU 2712098. Since hybrid technology is used, it is not difficult, in my opinion, to place one more element - a capacitance of 10-20 pF.
I will be happy to provide relevant materials and explanations. I have no intention of patenting this scheme anywhere outside the Russian Federation. Therefore, I will be glad if RU2712098 will be used as a business invention.
With respect, Eugeny.
