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TLC555: What should be cared about between CMOS and bipolar(SA555) device?

Part Number: TLC555

Hi Team

My customer considered use SA555DR at first but he is now considering TLC555IDR for its low power advantage.

But he also has concern that CMOS device may be susceptible to noise because of the low current.

Customer wonders if TI can advise them what they need to care about when transferring from bipolar device to CMOS device.

Customer is going to do their board prototype so they want to add them to circuit in advance if there’s any revise they should do.

Thanks.

Regards, 

Jo

  • Jo,

    I don't see noise being an issue when considering the bipolar vs cmos version. We do recommend following our layout guidelines highlighted in the product data sheet (pg. 27). Proper bypass capacitors, and a ground plane on the bottom layer can be used for helping with noise immunity. Here are the layout guidelines presented: