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Hi all,
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We had designed a board based on TCI6618. In our board, the DDR3 controller connects with 4 2Gb(16MB*16*8) DDR3 RAM chips.
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In the PCB, the CLK1p/n&CKE1p/n&CE1 connnects with Byte Lane 0, 1, 2, 3.
And the CLK0p/n&CKE0p/n&CE0 connects with Byte Lane 5, 6, 7, 8.
And the DDR3 runs at 1333MT/s.
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With this topology, I used the GEL file of C6670's EVM. And modified these regs' values below
TEMP |= 0x0 << 14; // NM bit field 15:14------------------set 64-bit width
TEMP |= 0x5 << 7; // ROWSIZE bit field 9:7--------------set ROWSIZE=14 bits
TEMP |= 0x1 << 3; // EBANK bit field 3:3------------------set using CE0&CE1
DDR_SDCFG = TEMP;
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After these settings, I test the DDR3's writing and reading.
And I got errors!!
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But if I TEMP |= 0x0 << 3; // EBANK bit field 3:3------------------set only using CE0
I tried to write the DDR3, it shows me that only half DDR3 space(the high 32 bits) works well.
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So can anyone help me to make all the DDR3 chips wok well?
Hi Feng Jin,
TCI66xx devices such as TCI6618 are supported directly through Local Field Applications Engineers (FAEs.) These devices are not supported on the E2E forum. Please contact your local FAE for support of these devices. If you are not sure who your local FAE is, then please contact your local technical sales representative and they will be able to put you in contact with your local FAE.
Thanks.