Hi TI,
in our embedded system, we have some sporadic issues in relation with DDR3 RAM and some boards fail suddenly on RAM corruption.
For years this wasn't any issue, but we needed to change to a second source and now we got some troubles.
We could already solve the issue by changing the RZQ resistor value and therefore increasing the drive strength. For further HW generation this is not a problem, but we have a lot of boards in the field, that have now a potential risk to fail and got already a bunch back in our support.
The question we have now is, could we achieve the same result in changing some specific configuration parameters in the EMIF DDR controller on AM3352?
Could this change in HW be made possible by changing some configuration in DDR register settings?
I have talked just know to the RAM manufacturer support and they said, that often this could be achieved on MPU DRAM controller settings.
In HW we have reduced the RZQ from 240 Ohm to 120 Ohm.
I have digged in EMIF controller settings and found this registers, that would have influence on driving strength.
SDRAM_CONFIG Register (7.3.5.3 in spruh73l.pdf)
reg_sdram_drive
reg_ddr_term
Any help or hint to increase driving strength without changing HW resistor would be much appreciated.
Thanks in advance for all answers.
Christian