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OPA858: Design of a low noise, extremely high bandwidth transimpedance amplifier

Part Number: OPA858
Other Parts Discussed in Thread: TINA-TI, , OPA855

Hello,

My goal is to design a transimpedance amplifier that meets the following requirements:

  • >= 1GHz -3dB cutoff
    • (Ideally as high as 4-5GHz)
  • >=+60dB gain
    • Order of millivolts output swing to be fed into an ADC

I'm using currently using TINA-TI to simulate the TIA, with the ultimate goal of producing a tangible physical version of the circuit in the future.

The current source for the transimpedance amplifier will be coming from a theoretical HgCdTe infrared photodetector that outputs current on the order of magnitude of ones of microamps.
I have chosen to simulate the photodiode model as a shunt resistor of 1GOhm, AC current source of 1uA and frequency of 1GHz, and junction capacitor of 1.6pF in parallel, and currently have the OPA858 connected to that model in a negative feedback configuration. The OPA858 was chosen because of its 5.5GHz GBWP and FET-input (for ultra-low bias current).

I'm fairly new to the world of amplifiers and their design considerations, and do not have a proper expectation of what my junction capacitance is going to be in the photodetector. For this reason, I've been playing around with the junction capacitance, feedback capacitance, and feedback resistance values to see how far I would be able to push the ability of a single OPA858. I don't know how to simulate a 50ohm BNC connection at the output somehow interfering with the circuit, so I just put a 50 ohm resistor and a capacitor to make a low pass filter that allowed 2 GHz through. Here is my current schematic and gain vs. frequency plot:

Right now, the only stable configuration I've been able to achieve is using CJ = 1.6pF, CF = 1pF, and RF = 200Ohm. I'm powering the OPA858 using a +2.5V and -2.5V power supply with 100nF decoupling capacitors in parallel with the battery. My criteria for stability was for the inverse feedback factor to be a relatively straight line when intersecting the open loop gain curve on a single graph, a technique which I learned from an AllAboutCircuits post.

I assumed that in general, as my feedback resistance increased my total bandwidth decreased, so I chose 200 ohms for the feedback resistance. This is in spite of the fact that my original goal was +60dB gain. At some point, I decided that I would leave the higher gain portion to a later voltage amplification stage that followed this transimpedance amplification stage, so I justified lowering the feedback resistance value here. I also worked under the assumption that, in general, sub-picofarad values for capacitors aren't feasible to work with in real life (the ultimate goal is to create the circuit), and that lower junction capacitance values yielded higher -3dB cutoffs, so I started with a junction capacitance of 1pF and worked my way up while trying to maximize the -3dB cutoff.

Here is the schematic and graph I used to choose the value of feedback resistor, holding the values of the feedback capacitor and junction capacitor constant at 1pF and 1.6pF respectively:

Although my signal to noise ratio will likely need to be much higher than a measly value of 1, a transient analysis of my graph from 0 to 10ns compared to the TINA-TI noise analysis function yields that noise overtakes the maximum value of my signal at 1.23GHz. Here are the graphs I used to come up with that information:

Which would lead me to believe that the uppermost limit of this circuit's bandwidth is 1.23GHz. But to add onto that issue, the phase graph produced by the AC transfer characteristic in TINA-TI is telling me that I pass -45 degrees at 410.31MHz, (of which I'm assuming based on some reading that the -45 degree mark is a value that helps to determine for what frequency range your circuit is still stable):

And so now, my circuit's "-3dB cutoff" has gone down from 1.68GHz to 410.31MHz.

There are a few major and minor problems I have with how I got to this point and future problems that I'm not sure how to think through, and for that I would request help:

  1. Problem 1: I don't know how realistic it is to even meet my design requirements. At the very least, I think I've come to the conclusion that it is impossible with just a single op-amp and no further circuitry.

    1. Problem 1a: I believe the junction capacitance of the actual photodetector that I would have available to use as the current source in this circuit would have a far higher junction capacitance than what I'm simulating (around 10nF), and I chose 1pF originally because I was just trying to see how much I could get from the OPA858. I don't know if (well, it probably is, but I don't know how to do it) it's possible to
      achieve my design requirements knowing that the junction capacitance needs to be that high, and that the current output of the detector will be that low.

    2. Problem 1b: The junction capacitance is a problem, but there also remains the problem of designing the system to be a working transimpedance amplifier that leads into a working voltage amplifier stage, and I don't know how to design a working voltage amplifier and how to couple the two stages together properly. Or if that's even the answer. I've toyed with the idea that having as much gain in a single stage will be the best option for minimizing my noise, so maybe the voltage amplifier isn't the right choice. I digress.

  2. Problem 2: I don't know how to properly evaluate signal to noise ratio in TINA-TI. My guess is that I should be using some metric like Vrms from the transient response divided by the "total noise" from the noise analysis function to acquire the SNR for any given frequency.

    1. Problem 2a: If I could reduce total noise while maintaining my signal amplitude, then theoretically that would also be a way of actually being able to use more of the -3dB bandwidth described by my original gain vs. frequency graph. I don't know how to reduce the total noise in this circuit.

    2. I've been trying to learn more about noise analysis and noise design considerations from the book "The Art of Electronics" and its supplementary material, the "X-Chapters", but I haven't been able to apply what it's been telling me to my design, from a lack of basic electrical engineering knowledge (confusing resistance/capacitance value choices, component choices, topology choices, too much focus on understanding solid state physics instead of getting the gist and moving on, etc).
  3. Problem 3: I don't know how to increase the gain of this circuit while ALSO increasing the usable bandwidth of the circuit.

    1. Problem 3a: I've begun investigating a circuit topology called "bootstrapping" that supposedly allows transimpedance amplifiers to have higher bandwidth by reducing effective source capacitance by holding the AC voltage drop across the input capacitance low.

      1. I learned about this concept, along with the phrase "cascode" w.r.t transistor configurations that precede the "primary" op-amp in TIA circuits from Philip Hobbs' "Photodiode Frontends: The Real Story" and his book "Building Electro-optical Systems", but similarly to my approach with "The Art of Electronics", I'm just not fundamentally understanding how to apply the concepts he describes to my situation. That is:

    2. Problem 3b: I don't know how to choose what op-amp or transistor I would use in a bootstrap configuration to actually achieve the higher bandwidth. I also don't know what value of coupling capacitor to use to tie the bootstrap amplifier in such a configuration together, or in general what a valid topology would look like for accomplishing my goal (is there also a negative feedback loop with feedback resistor and capacitor with the bootstrap amplifier? Should the output of that op-amp be attached to the same node of the photodiode model that's tied to ground? Should it even be an op-amp at all?).

Questions like these and more are currently sitting in my head while I'm also trying to properly digest the aforementioned reading material, never mind the fact that I've conveniently attached zero mathematical equations to back up any of the design choices I've made so far, largely because I have no confidence in any of the calculations I'd be capable of performing.

That is to say, I would appreciate any and all guidance and feedback with my problem, approach, and assumptions.

Thank you very much,

Gabe

  • Hi Gabe,

    the first step is always to determine the detector capacitance. This information is absolutely crucial when designing a TIA. Only by exactly (!) knowing the detector capacitance the TIA can be made working stably by choosing a very certain and adapted feedback capacitance which plays the role of a phase lead compensation. The feedback resistance also plays an ernormous role when it comes to stability. And for highest bandwidth in combination with the known detecor capacitance only a very certain set of feedback capacitances and feedback resistances will properly work in most cases. And all this also depends on the chosen OPAmp at the same time. So, given the exact detector capacitance you cannot freely choose the transimpedance (gain) and bandwidth usually. If you wish highest bandwidth with the exactly given detector capacitance, then you have to choose a very certain feedback capacitance and feedback resistance, even if neither the bandwidth nor the gain may please you. If you think you cannot live with a too low bandwidth, then usually the only remedy is to choose a detector with a lower detector capacitance (if this is possible at all). And the transimpedance is usually your least problem since you can increase the transimpedance by simply adding a (hoperfully fast enough) gain stage.

    The stability of TIA is simulated by performing a phase stability analysis. And the bandwidth is simulated by simulating the frequency response and transient response of circuit. By adjusting the component values you will quickly find an optimum between stability and the bandwidth and the step response. The optimum component values are found by trial and error starting from some rule of thumb values from the datasheet or just by experience Relaxed

    These threads may interest you:

    https://e2e.ti.com/support/amplifiers-group/amplifiers/f/amplifiers-forum/1127798/opa855-peaking-in-open-loop-response

    https://e2e.ti.com/support/amplifiers-group/amplifiers/f/amplifiers-forum/1095982/opa855-opa855

    https://e2e.ti.com/support/amplifiers-group/amplifiers/f/amplifiers-forum/1064558/opa855-output-oscillates

    https://e2e.ti.com/support/amplifiers-group/amplifiers/f/amplifiers-forum/1078878/opa855-wideband-composite-photodiode-tia-4kohm-500mhz-oscillates

    https://e2e.ti.com/support/amplifiers-group/amplifiers/f/amplifiers-forum/1203677/opa855-tina-spice-simulation-gives-unrealistic-results

    https://e2e.ti.com/support/amplifiers-group/amplifiers/f/amplifiers-forum/868888/opa858-why-is-there-voltage-at-the-input-side-of-the-amplifier-without-input

    https://e2e.ti.com/support/amplifiers-group/amplifiers/f/amplifiers-forum/1102658/opa858-tia-configuration

    So, try to find out the exact detector capacitance first. This is really crucial for making the TIA circuit properly work Relaxed

    Kai

  • Hi Gabe,

    when the detector capacitance is higher than desired, another trick can be used to extend the bandwidth of TIA: A JFET is inserted between the detector and the input of TIA to isolate the input of TIA from the detector capacitance. This has been discussed here:

    https://e2e.ti.com/support/amplifiers-group/amplifiers/f/amplifiers-forum/980967/opa656

    https://e2e.ti.com/support/amplifiers-group/amplifiers/f/amplifiers-forum/974530/lmh32401rgtevm-thread-lmh32401rgtevm-ringing-in-output-of-lmh32401-is-locked-why

    https://e2e.ti.com/support/amplifiers-group/amplifiers/f/amplifiers-forum/984620/opa656-opa656

    Kai

  • Hi Kai,

    I appreciate the fast response, and sorry that I couldn't get back to your earlier.

    I am now understanding that my junction capacitance of my photodetector is going to be 90 femtofarads (so, actually significantly lower than I expected).

    Are there any complications or concerns with a photodiode model that uses a junction capacitance that is this low?

    Also, I looked at your collection of links on stability analysis. Is there a name or description of this scheme that you appear to be commonly using to probe amplifier circuits for stability?

    I've tried inserting this probing scheme into my own TIA circuit, taking inspiration from how you've used it in your linked threads, and I'm having trouble finding values of feedback resistance/capacitance that will permit a 90fF photodiode model to have both a >1GHz -3dB bandwidth and a >=45degree phase at 0 gain in the phase stability circuit.

    It appears I'm forced to choose between feedback network values that are stable, but have too low of a -3dB bandwidth (usually less than <550MHz) OR feedback network values that are high enough to have a >1GHz -3dB bandwidth, but are unstable (phase of around 30-40degrees). Should I look for a different op-amp to use, or are there more circuit topology tricks we can use to increase the bandwidth while maintaining stability?

    Thanks,

    Gabe

  • Morning Gabe, without going through the mass of really good info here, for the relatively low Feedback R's you are using I would normally use a decompensated bipolar input VFA, like the OPA855

  • Hi Michael,

    My initial concern with using the OPA855 was the input bias current being significantly higher than the OPA858, because I'm expecting signals on the order of ones of microamps. (The OPA855 has an input bias current of Typical: -12uA.) My understanding of input bias current is that, when this amount of current does not either come out of or go into either input terminal of the op-amp, the op-amp will not run in the proper operating regime. Is this wrong?

    However, I tried using the OPA855, and using a combination of what I had before and Kai's wisdom, I've reached something I'd like some feedback on:

    • Do these results (AC transfer characteristic, noise analysis, transient analysis, phase stability analysis) imply a stable (albeit fragile?) circuit with a 1.05GHz -3dB bandwidth?

    • What is the reason my Vrms on the transient analysis (0-10ns) begins at 11.54mV, where I would be expecting 1uA to become 1mV after the 1kohm feedback resistor?

    • Should I be worried about the gain peaking after the -3dB bandwidth in the Bode plot? 

    • What does a 200fF feedback capacitance imply for the sake of realistically producing this circuit?

      • I've read about sub-picofarad feedback capacitances in The X-Chapters of the Art of Electronics, where the author describes being able to make sub-picofarad capacitances as gimmick capacitors, but I'm worried about the stability.

      • In my case, can the 200fF feedback capacitance be a model of the OPA855's 0.2pF differential input capacitance?

    I appreciate your guidance.

    Thanks,

    Gabe

    opa855_tia.TSC

    5265.opa855_tia_stability.TSC

  • Hello Gabe,

      Thank you for your detailed analysis on this thread! Michael brought up the OPA855 because of your chosen feedback resistor. Even though OPA855 has a larger input bias current/ current noise, depending on your chosen resistors, the improvement to the offset voltage/voltage noise might give you overall better performance compared to OPA858. 

      For feedback capacitors, 200fF is possible with difficulties; we usually recommend for possible designs that the feedback capacitor must be >= 100fF. There are some techniques to achieve 200fF via using capacitive tee network especially when considering capacitive parasitic from the board:

       Your stability analysis does show >45 degrees which implies stability; but with considering the speeds + board layout this might lead to instability in practice. Extra care will have be taken for board layout especially at feedback/inputs of the device. TIA calculator does agree with your design choices:

          

      Above calculator is for achieving a Butterworth response (65 degree phase margin, 0.707 Q factor). Are you expecting sub 100fF photodiode input capacitance and will this diode be able to be placed as close as possible to the device input? 

    Thank you,

    Sima  

  • Hi Sima,

    I am expecting a photodiode junction capacitance of 90fF, yes.

    However, the photodiode will need to be inside of a box, and so there will be feedthroughs of nonzero/significant length (>1 inch) out of the box and onto the transimpedance amplification circuit, and in general, placing the photodiode directly on the same board as the transimpedance amplifier circuit will likely not be possible. I'm aware this will be a concern (likely a fatal one?) as longer leads will cause catastrophic damage to performance for these highly sensitive fast circuits, but I don't know how to quantify how much of a problem that will be.

    Additionally, going back to feedback capacitors, it appears that there are some 0.2pF capacitors available on Digikey (are these better in some way than using a capacitive tee network?). However, their tolerances are +/- 0.05pF, and it appears that at 1kohm feedback resistance, my circuit is unstable at 150fF (but is stable at 200fF and 250fF). To compound this problem, if I change my feedback resistance to allow for stability at 150fF, 200fF, and 250fF, then the circuit loses its -3dB bandwidth of >=1GHz for 200fF and 250fF.

    To summarize, I've found the following results with varying feedback resistances and this 0.2 +/- 0.05pF capacitor range,

    Is there anything I can do to escape this dilemma while still meeting my goal of >1GHz -3db cutoff and stability?

    Thanks,

    Gabe

  • Hello Gabe, 

       From prior lab experiences, anything longer than an inch unfortunately can cause drastic consequences to the overall stability. You are correct that the parasitic at these very high speeds are crucial. 

       For the feedback capacitor, a capacitive tee is not required if you are able to find 200fF capacitors. Thank you for the overview table; it does show how sensitive the circuit is for stability. Kai and I had a prior experience with a customer looking at high speeds with >1 inch distance of photodiode from input of the amplifier. Here is the e2e thread discussing this issue with oscillations: https://e2e.ti.com/support/amplifiers-group/amplifiers/f/amplifiers-forum/987143/opa858-another-photodiode-amplifier-for-short-1-2ns-laser-pulse

       There were private discussions were we discovered the non-ideal layout design in the OPA85x datasheets would be the correct layout for these >1inch distances. Pasted below is the discussion: 

             1 - Move the photodiode as close as possible to OPA858: This will be the biggest factor for oscillations, and it is highly recommended.

    2 - Close the feedback at the amplifier and not the photodiode: Yes, close the feedback at the amplifier rather than photodiode. Apparently this improved layout was due to a design simulation showing better results. But, in practice it was shown that closing the feedback at the amplifier was the better choice for long distances.  

    3 - Should I remove the isolation resistor if I'm no longer using the "Improved TIA Layout": Yes, remove the isolation resistor. 

    4 - Removing the capacitive tee network in favor of just 2 series capacitor: Yes, this is a good idea for an amplifier at this bandwidth. 

    5 - Adding another pad in the resistive feedback so I can use 2 resistors in series instead of 1 big resistor (453 - 2kOhms). This one depends, having smaller resistors are better. But for 453-1kOhms it should be ok with 1 resistor. 

    6 - Should I remove all copper pours underneath the feedback components. Yes, remove copper pours at pins 1 and 2 and around the feedback  components as well. This is done in the EVMs but was not directly shown in the datasheet.

    7 - Divider network: For 50 ohm measurement, it is critical to match impedances due to reflections that can occur at these high frequencies. If connecting to OPA858, then a very short trace to the second stage is recommended if avoiding the attenuation at the output due to the divider. (For this one, would you be able to share your input current range, we could maybe increase the gain but avoid saturating at the output at your max input current)

       Kai has extensively done simulations with input parasitic. Your overview table would be affected by this >1inch application. Here are e2e threads on adding inductance/capacitance from traces/cable:

    1. https://e2e.ti.com/support/amplifiers-group/amplifiers/f/amplifiers-forum/1064558/opa855-output-oscillates
    2. https://e2e.ti.com/support/amplifiers-group/amplifiers/f/amplifiers-forum/1195297/opa858-how-to-expand

       From above threads; Kai recommends adding a series resistor to increase stability with shown simulations in the first linked e2e. 

       We recommend adding a placeholder for including additional input capacitance to ground directly at the input of the amplifier due to the inductance isolation of the photodiode capacitance. 

    Thank you,
    Sima 

  • Hi Sima,

    Thank you for the recommendations and guidance with regards to mitigating the issues that will undoubtedly arise as a result of the distance between the photodiode and the amplifier. 

    At present, is there anything else I can do in terms of circuit topology/design to increase the resilience/robustness of the amplifier, so that actual board layout design considerations and techniques can be minimized? Or is the circuit at its utmost capability?

    I'm noticing that manufacturing tolerances across worst case scenarios for a T-network that is equivalent to 200fF lowers the range of expected capacitances from 150fF-250fF to 180fF-220fF. However, achieving stability and bandwidth this configuration doesn't seem likely from my simulations, so I'm also wondering if this route is worth any further investigating (feedback resistor required for stability = 1.4kohm, feedback resistor required for bandwidth = 1.2kohm).

    Thanks,

    Gabe

  • Hello Gabe,

      I agree that at present, I do not see any more suggestions for adjusting the circuit. You brought up bootstrapping the TIA to isolate the input capacitance, which does extend closed loop bandwidth. However, for your design of a sub pF input capacitance, there wouldn't be a massive improvement and would add increased complexity with additional parasitic to the board and the transistor would contribute more capacitance than the photodiode. 

      I found this resource for extending the bootstrapping which shows an increase in measured bandwidth: link can be found here

      I would suggest trying out the design with the OPA855 EVM. The biggest challenge is stability with photodiode >1inch away from the input of the amplifier which would alter your stability simulations where a different value for your feedback capacitor would be needed. Here is a thread on modifying EVM for TIA, not explicitly stated in the thread but you would add CF by soldering it directly on top of RF. 

    Thank you,
    Sima 

  • Also Sima, keep in mind that typical thick film R's are about 0.18pF parasitic by themselves. 

  • In continuing my circuit design and transitioning towards PCB design, I've been looking at the OPA855 Evaluation Board, and I see the bypass capacitor network on board is using a 2.2uF/0.22uF/0.01uF capacitor network for the split power supply rails (Vcc and Vee), and a 0.01uF X2Y capacitor (which I believe is for moving the self resonance F, according to a post from Michael 3 years ago).

    If my goal is to create a bypass capacitor network for my circuit whose goal is to pass through 1GHz signals optimally, can I transplant that bypass capacitor network onto my circuit? Is the X2Y cap necessary?

    Additionally, when translating my circuit to one that could go on a PCB, is an input isolation resistor necessary? Or the same with my output RC network, is that also unnecessary if I'm planning on having the output pin of the IC connect to an output SMA connector? 

  • Hello Gabe,

      Are you looking to use the bypass capacitor network for your circuit's power supplies? If so, yes you may use the same capacitor network for your circuit. The 0.01uF between the rails are to help decouple between the rails as well, but most important is the pi filter. 

       I would not include the input isolation resistor as shown in improved TIA layout in datasheet because in above reason: "close the feedback at the amplifier and not the photodiode". Adding an output isolation resistor is still recommended to be placed as close to the output pins of the amplifier as possible.

    Thank you,
    Sima

  • Hi Sima,

    Thank you for the clarification.

    How do I calculate the value of my output isolation resistor? 

    Following this thread you linked: https://e2e.ti.com/support/amplifiers-group/amplifiers/f/amplifiers-forum/987143/opa858-another-photodiode-amplifier-for-short-1-2ns-laser-pulse, I see that a discussion occurred for replacing the OPA858EVM's output matching resistor network components with different values (with one of the resistors being removed outright). Assuming my SMA connection is 50ohm, and I'm currently transplanting this output matching network onto my PCB, can I also remove OPA855EVM's R6 and replace its R7 with a 50ohm resistor (specifically this sort of load resistor tied to ground in parallel with my output SMA)?

    Thanks,

    Gabe

  • Hello Gabe,

      I agree with Kai in the thread with removing the 71R5 resistor (R7) and replace the 169R (R6) resistor with a 49.9R resistor. You would then place this series 49.9R resistor as close to the output pin of the amplifier as possible. This is important for isolating the output impedance of the amplifier for stability concerns. Also, this would work with your 50 ohm SMA connector. If you place a 50 ohm resistor to ground (R7) this wouldn't provide isolation or impedance matching (for minimizing signal reflections) from output pin to SMA to scope. Additionally, the traces on the PCB have to have a characteristic impedance of 50 ohm. 

      (example of SMA connector)

      Here are some references for transmission line and impedance matching:

    1. https://www.electronicdesign.com/technologies/communications/article/21796367/back-to-basics-impedance-matching-part-1
    2. https://www.allaboutcircuits.com/textbook/radio-frequency-analysis-design/real-life-rf-signals/what-is-a-transmission-line/
    3. https://www.ti.com/video/6307564100112   (Video on PCB trace impedance matching)

      Let me know if you have any questions on the information provided from above references. 

      And, this thread contains a zipped folder of the OPA855 Geber files if you would like to use it as reference for building your PCB. 

    Thank you,
    Sima